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| Preliminary Data Sheet PD - 5.035 CPV364MM IGBT SIP MODULE Features * Short Circuit Rated - 10s @ 125C, V GE = 15V Fully isolated printed circuit board mount package * Switching-loss rating includes all "tail" losses TM * HEXFRED soft ultrafast diodes * Optimized for medium operating frequency (1 to 10kHz) * 3 Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 D3 15 Q5 D5 16 D6 Short Circuit Rated Fast IGBT 1 10 Q6 Product Summary 7 13 Output Current in a Typical 5.0 kHz Motor Drive 13 ARMS per phase (4.1 kW total) with T C = 90C, T J = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% 19 Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to power applications and where space is at a premium. These new short circuit rated devices are especially suited for motor control and other totem-pole applications requiring short circuit withstand capability. IMS-2 Units V Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM IF @ T C = 100C IFM tsc VGE VISOL PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 22 12 44 44 9.3 44 10 20 2500 62.5 25 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55 - 0.8 N*m) A s V VRMS W C Thermal Resistance Parameter RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module Typ. -- -- 0.1 20 (0.7) Max. 2.0 3.0 -- -- Units C/W g (oz) Revision 2 C-425 CPV364MM Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A -- 0.69 -- V/C VGE = 0V, IC = 1.0mA -- 1.7 -- IC = 12A V GE = 15V -- 2.0 -- V IC = 22A -- 1.9 -- IC = 12A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -12 -- mV/C VCE = VGE, IC = 250A 9.2 12 -- S VCE = 100V, I C = 24A -- -- 250 A VGE = 0V, V CE = 600V -- -- 3500 VGE = 0V, V CE = 600V, T J = 150C -- 1.3 1.7 V IC = 15A -- 1.2 1.6 IC = 15A, T J = 150C -- -- 500 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 59 80 IC = 24A 8.6 10 nC VCC = 400V 25 42 26 -- TJ = 25C 37 -- ns IC = 24A, V CC = 480V 240 410 VGE = 15V, R G = 10 230 420 Energy losses include "tail" and 0.75 -- diode reverse recovery. 1.65 -- mJ 2.4 3.6 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 10, VCPK < 500V 28 -- TJ = 150C, 37 -- ns IC = 24A, V CC = 480V 380 -- VGE = 15V, R G = 10 460 -- Energy losses include "tail" and 4.5 -- mJ diode reverse recovery. 1500 -- VGE = 0V 190 -- pF VCC = 30V 20 -- = 1.0MHz 42 60 ns TJ = 25C 74 120 TJ = 125C I F = 15A 4.0 6.0 A TJ = 25C 6.5 10 TJ = 125C V R = 200V 80 180 nC TJ = 25C 220 600 TJ = 125C di/dt = 200A/s 188 -- A/s TJ = 25C 160 -- TJ = 125C Pulse width 5.0s, single shot. Repetitive rating; V GE=20V, pulse width limited by maximum junction temperature. Refer to Section D for the following: Package Outline 5 - IMS-2 Section D - page D-14 C-426 VCC=80%(V CES), VGE=20V, L=10H, R G= 10 Pulse width 80s; duty factor 0.1%. |
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